BD441G The BD441G is an NPN bipolar junction transistor rated for 80V collector-emitter voltage and 4A collector current. It comes in a through-hole TO-126 package.
Mfr Part #:

BD441G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD441G is an NPN bipolar junction transistor rated for 80V collector-emitter voltage and 4A collector current. It comes in a through-hole TO-126 package.
Total Stock: 405 pcs
$ Price Range: $0.57 - $1.37

BD441G Available from 1 distributor

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BD441G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD441G Description

Short technical summary and product information.

The BD441G is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

The transistor features a maximum collector-emitter voltage of 80V, a maximum collector current of 4A, and a maximum power dissipation of 36W. It offers a minimum DC current gain of 40 at a test condition of 500mA collector current and 1V collector-emitter voltage. The maximum collector-emitter saturation voltage is 800mV at a base current of 300mA and collector current of 3A. The typical transition frequency is 3MHz.

 

The BD441G is available in a TO-225AA / TO-126-3 package with a supplier device package of TO-126. It is a through-hole mounting device suitable for PCB insertion. The operating junction temperature range is -55°C to 150°C.

 

This transistor is suitable for use in power switching circuits, linear amplifiers, and other general-purpose applications where NPN bipolar transistor characteristics are required.

BD441G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BD441G NPN Bipolar Junction Transistor
Subcategory: Single NPN

BD441G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD441G Estimated Pricing

Qty Low High
1+ $1.37 $1.37
10+ $0.86 $0.86
100+ $0.57 $0.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD441G Features

  • NPN bipolar junction transistor.
  • 80V maximum collector-emitter voltage.
  • 4A maximum collector current.
  • 36W maximum power dissipation.
  • TO-126 through-hole package.

BD441G Applications

  • General purpose switching circuits.
  • Power amplifier output stages.
  • Medium current load driving.
  • Linear amplifier applications.

BD441G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD441G?

The maximum collector-emitter voltage (Vceo) is 80V.

What is the maximum collector current of the BD441G?

The maximum collector current (Ic) is 4A.

What is the power dissipation rating of the BD441G?

The maximum power dissipation (Pd) is 36W.

What is the operating temperature range of the BD441G?

The operating junction temperature range is -55°C to 150°C.

What package is the BD441G available in?

The BD441G is available in a TO-225AA / TO-126-3 package, with a supplier device package of TO-126. It is a through-hole mounting device.

What is the DC current gain (hFE) of the BD441G?

The minimum DC current gain (hFE) is 40, measured at Ic=500mA and Vce=1V.

What is the saturation voltage of the BD441G?

The maximum collector-emitter saturation voltage (Vce(sat)) is 800mV at a base current of 300mA and collector current of 3A.

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