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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,335 pcs
|
36335 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
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| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD439S is an NPN bipolar junction transistor from ON Semiconductor designed for medium-power switching and amplification. It features a maximum collector-emitter voltage of 60V, a maximum collector current of 4A, and a power dissipation rating of 36W.
The electrical characteristics include a DC current gain (hFE) of at least 20 at Ic=10mA and Vce=5V, and a collector-emitter saturation voltage of 800mV at Ib=200mA and Ic=2A. The transition frequency is rated at 3MHz, supporting moderate-speed switching applications.
The device is supplied in a through-hole TO-225AA / TO-126-3 package, with the supplier device package specified as TO-126-3. Its maximum operating junction temperature is 150°C, making it suitable for power supply circuits, motor drivers, and other medium-power stages.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum collector current is 4A.
The device is rated for 36W power dissipation.
The minimum DC current gain (hFE) is 20 at Ic=10mA and Vce=5V.
The saturation voltage is 800mV at Ib=200mA and Ic=2A.
It is available in through-hole TO-225AA and TO-126-3 packages, with the supplier device package TO-126-3.
Existing data lists the BD439S as RoHS3 compliant, but this status is unverified. Confirm against current manufacturer documentation.