BD439G The BD439G is an NPN bipolar junction transistor from On Semiconductor rated for 60V collector-emitter voltage and 4A collector current. It comes in a through-hole TO-126 package with 36W power dissipation capability.
Mfr Part #:

BD439G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD439G is an NPN bipolar junction transistor from On Semiconductor rated for 60V collector-emitter voltage and 4A collector current. It comes in a through-hole TO-126 package with 36W power dissipation capability.
Total Stock: 16,520 pcs
$ Price Range: $0.66 - $1.57

BD439G Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,000 pcs
13000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,520 pcs
3520 pcs On Request 1 On Request On Request On Request On Request On Request

BD439G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD439G Description

Short technical summary and product information.

The BD439G is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling. The device features a maximum collector-emitter voltage of 60V and a maximum collector current of 4A, making it suitable for a range of power control circuits.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 500mA collector current and 1V collector-emitter voltage, and a maximum collector-emitter saturation voltage of 800mV at 300mA base current and 3A collector current. The typical transition frequency is 3MHz, indicating suitability for low-frequency switching applications.

 

The transistor can dissipate up to 36W of power and operates over a junction temperature range of -55°C to 150°C. It is housed in a through-hole TO-225AA/TO-126-3 package with a TO-126 supplier device package, allowing for straightforward PCB mounting and heat sinking.

 

This component is appropriate for use in power supply circuits, motor drivers, and other applications where a robust NPN transistor with 60V/4A ratings is required. The through-hole package facilitates manual assembly and prototyping.

BD439G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BD439
Canonical Name: NPN Bipolar Transistor, 60V, 4A, TO-126
Subcategory: Single BJT

BD439G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD439G Estimated Pricing

Qty Low High
1+ $1.57 $1.57
10+ $0.99 $0.99
100+ $0.66 $0.66

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD439G Features

  • NPN bipolar junction transistor design.
  • Rated for 60V collector-emitter voltage.
  • Handles up to 4A collector current.
  • Dissipates up to 36W of power.
  • Through-hole TO-126 package mounting.

BD439G Applications

  • Used in power supply switching circuits.
  • Suitable for motor driver stages.
  • Ideal for general-purpose amplification.
  • Works in low-frequency power control.

BD439G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD439G?

The maximum collector-emitter voltage (Vce) is 60V.

What is the maximum collector current of the BD439G?

The maximum collector current (Ic) is 4A.

What is the power dissipation rating of the BD439G?

The maximum power dissipation is 36W.

What is the operating temperature range of the BD439G?

The operating junction temperature range is -55°C to 150°C.

What package is the BD439G available in?

The BD439G is available in a through-hole TO-225AA/TO-126-3 package, with a supplier device package of TO-126.

What is the DC current gain (hFE) of the BD439G?

The minimum DC current gain (hFE) is 40 at a test condition of 500mA collector current and 1V collector-emitter voltage.

What is the collector-emitter saturation voltage of the BD439G?

The maximum collector-emitter saturation voltage is 800mV at a test condition of 300mA base current and 3A collector current.

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