| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD439 is a silicon power transistor manufactured by STMicroelectronics, suitable for amplifier and switching applications. It is housed in a TO-126 package.
Key electrical characteristics include a continuous collector current of 4A and a collector-emitter voltage of up to 80V. The transistor exhibits a collector-emitter saturation voltage of 0.8V at 3A and a base-emitter voltage of 1.1V at 2A. Its transition frequency is 3MHz.
Thermal specifications include a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C. The power dissipation is rated at 1.25W, though some sources indicate a higher 36W maximum power dissipation.
This component is designed for through-hole mounting and is compatible with amplifier and switching circuits where robust performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD439 transistor has a maximum continuous collector current of 4A.
The BD439 transistor has a collector-emitter voltage rating of up to 80V.
The BD439 transistor is supplied in a TO-126 package.
The maximum junction temperature for the BD439 transistor is 150°C.
The BD439 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BD439 transistor is 1 Unlimited.