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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD438STU is a PNP bipolar junction transistor manufactured by onsemi. It is designed for general-purpose switching and amplification applications. Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 45V, a continuous collector current (IC) of 4A, and a DC current gain (hFE) of minimum 30 at 10mA collector current and 5V VCE. The transistor has a maximum VCE saturation voltage of 600mV at 200mA base current and 2A collector current. The transition frequency (fT) is 3MHz. Power dissipation is rated at 36W. The device is housed in a TO-225AA / TO-126-3 through-hole package, with an operating junction temperature up to 150°C. This transistor is suitable for medium-power linear and switching circuits where PNP polarity is required.
45V (VCEO).
TO-225AA / TO-126-3 through-hole package.
150°C.
RoHS3 compliant (unverified).
4A continuous.
Minimum 30 at 10mA collector current and 5V VCE.
3MHz.