BD438 On Semiconductor BD438 is a PNP silicon medium power transistor with a 45V collector-emitter breakdown voltage and 4A continuous collector current. Packaged in TO-225 for through-hole mounting.
Mfr Part #:

BD438

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
On Semiconductor BD438 is a PNP silicon medium power transistor with a 45V collector-emitter breakdown voltage and 4A continuous collector current. Packaged in TO-225 for through-hole mounting.
Total Stock: 17 pcs
$ Price Range: $0.17 - $0.85

BD438 Available from 1 distributor

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BD438 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ IC=10 mA, VCE=5 V)
DC Current Gain (hFE) (Minimum/Maximum @ Ic = 500 mA, Vce = 1 V)
Emitter Cutoff Current (Iebo)
Emitter-Base Breakdown Voltage (VEBO)
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance Junction-to-Case (RθJC)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD438 Description

Short technical summary and product information.

The BD438 is a PNP silicon medium power transistor from On Semiconductor (onsemi) designed for general-purpose amplifier and switching circuits. It features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 4A, with a total device dissipation of 36W when the case temperature is maintained at 25°C.

 

Electrical characteristics include a DC current gain (hFE) of 85 to 475 at 500 mA and 1V, ensuring consistent performance in linear applications. The collector-emitter saturation voltage is a maximum of 700 mV at 3A collector current, contributing to low on-state losses. Transition frequency is specified at 3 MHz, making it suited for low-frequency switching and amplification tasks.

 

The device is housed in a TO-225AA (TO-126-3) through-hole package, with an operating junction temperature range of -55°C to +150°C. It is available in Pb-Free and RoHS Compliant versions, supporting environmental compliance requirements in new designs or replacements.

BD438 Quick Information

Product Type: Bipolar Transistor (BJT)
Canonical Name: On Semiconductor BD438 PNP Silicon Medium Power Transistor
Subcategory: Medium Power Transistor

BD438 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BD438 Estimated Pricing

Qty Low High
1+ $0.85 $0.85
10+ $0.60 $0.60
100+ $0.42 $0.42
500+ $0.32 $0.32
1,000+ $0.27 $0.27
2,500+ $0.24 $0.24
6,000+ $0.21 $0.21
12,000+ $0.19 $0.19
30,000+ $0.17 $0.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD438 Features

  • 45V minimum collector-emitter breakdown voltage.
  • 4A maximum continuous collector current rating.
  • 36W total device dissipation at 25°C.
  • RoHS3 compliant and Pb-Free package.
  • TO-225 through-hole package for easy mounting.

BD438 Applications

  • General purpose power amplification stages.
  • Medium current switching applications.
  • Audio amplifier output and driver circuits.

BD438 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BD438?

The minimum collector-emitter breakdown voltage (VCEO) is 45V.

What is the maximum collector current rating of the BD438?

The maximum collector current (IC) is 4A.

What package does the BD438 come in?

The BD438 is available in a TO-225AA (TO-126-3) through-hole package.

What is the operating temperature range of the BD438?

The operating junction temperature range is -55°C to +150°C.

Is the BD438 RoHS compliant?

Yes, the BD438 is RoHS3 compliant and Pb-Free as stated in the datasheet.

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