| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
920 pcs
|
920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD437 is an NPN bipolar junction transistor designed for general purpose switching and amplification applications. It features a collector-emitter voltage rating of 45V and a continuous collector current of 4A, making it suitable for medium-power circuits.
With a power dissipation of 36W and a transition frequency of 3MHz, this transistor can handle moderate frequency switching tasks. The DC current gain (hFE) is minimum 85 at 500mA collector current and 1V Vce, ensuring reliable amplification. The collector-emitter saturation voltage is typically 800mV at 300mA base current and 3A collector current.
The BD437 is offered in a TO-225AA / TO-126-3 through-hole package, specifically the TO-126 supplier package. It operates over a junction temperature range of -55°C to 150°C. The component is compliant with RoHS3, REACH, and has an MSL of 1 (unlimited). Note: compliance data is unverified and should be confirmed.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.34 | $1.34 |
| 50+ | $0.63 | $0.63 |
| 100+ | $0.56 | $0.56 |
| 500+ | $0.43 | $0.43 |
| 1,000+ | $0.39 | $0.39 |
| 2,000+ | $0.36 | $0.36 |
| 5,000+ | $0.32 | $0.32 |
| 10,000+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
45V.
TO-225AA / TO-126-3 (TO-126).
-55°C to 150°C (junction).
It is listed as RoHS3 compliant, but this information is unverified and should be confirmed.
NPN bipolar junction transistor.
4A.
Minimum 85 at 500mA collector current and 1V Vce.