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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,911 pcs
|
33911 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD436T is a PNP silicon bipolar junction transistor designed for medium-power amplification and switching applications. It offers a collector-emitter voltage rating of 32V and a continuous collector current of 4A, with a power dissipation of 36W when mounted to a heatsink. The device features a DC current gain (hFE) of at least 85 at 500mA and a saturation voltage of 500mV maximum at 2A collector current. The transition frequency is 3MHz, making it suitable for low-frequency switching and linear amplification. The transistor is housed in a TO-225AA (TO-126-3) through-hole package, allowing easy mounting on printed circuit boards. The operating junction temperature range is -55°C to 150°C. The BD436T is part of a complementary pair with NPN types BD437 and BD441. This device is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 50+ | $0.50 | $0.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
32V.
TO-225AA (TO-126-3) through-hole package.
-55°C to 150°C junction temperature.
The BD436T is listed as RoHS3 compliant, but this status is unverified.
Minimum 85 at VCE=1V, IC=500mA.
Maximum 500mV at IB=200mA, IC=2A.
3MHz.