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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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54,917 pcs
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54917 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD435STU is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 32V, a continuous collector current rating of 4A, and a power dissipation of 36W. The transistor offers a DC current gain (hFE) of at least 40 at 10mA collector current and 5V Vce, and a transition frequency of 3 MHz. The maximum Vce saturation voltage is 500mV at 200mA base current and 2A collector current.
The device is housed in a TO-126-3 (also known as TO-225AA) through-hole package, suitable for PCB mounting with standard soldering processes. The operating junction temperature range extends up to 150°C.
This transistor is commonly used in power management circuits, driver stages, and linear regulators where NPN polarity and through-hole assembly are required.
32V.
4A.
36W.
TO-126-3 (also TO-225AA).
Up to 150°C.
Minimum 40 at 10mA, 5V.
RoHS3 Compliant (unverified).