BD435S NPN bipolar transistor with 32V collector-emitter voltage, 4A collector current, and 36W power dissipation. Housed in a TO-126-3 through-hole package.
Mfr Part #:

BD435S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 32V collector-emitter voltage, 4A collector current, and 36W power dissipation. Housed in a TO-126-3 through-hole package.
Total Stock: 17,831 pcs
$ Price Range: $0.20 - $1.24

BD435S Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,831 pcs
9831 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
8,000 pcs
8000 pcs On Request 1 On Request On Request On Request On Request On Request

BD435S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD435S Description

Short technical summary and product information.

The BD435S is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications. Key electrical specifications include a maximum collector-emitter voltage of 32V, a maximum collector current of 4A, and a maximum power dissipation of 36W. The transistor offers a minimum DC current gain (hFE) of 40 at 10mA collector current and 5V Vce, with a typical transition frequency of 3 MHz. The maximum Vce saturation voltage is 500mV at 200mA base current and 2A collector current. The device is housed in a TO-126-3 through-hole package (also known as TO-225AA), suitable for PCB mounting. The operating junction temperature range extends up to 150°C. This transistor is RoHS3 compliant and has an MSL of 1 (unlimited). It is commonly used in power management circuits, motor drivers, and audio amplifiers where moderate current and voltage handling are required.

BD435S Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: BD435S NPN Bipolar Transistor
Subcategory: Single NPN

BD435S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD435S Estimated Pricing

Qty Low High
1+ $1.24 $1.24
10+ $0.88 $0.88
100+ $0.55 $0.55
500+ $0.38 $0.38
1,000+ $0.32 $0.32
2,000+ $0.26 $0.26
4,000+ $0.24 $0.24
10,000+ $0.22 $0.22
24,000+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD435S Features

  • NPN bipolar junction transistor.
  • Maximum collector-emitter voltage of 32V.
  • Maximum collector current of 4A.
  • Power dissipation up to 36W.
  • Through-hole TO-126-3 package.

BD435S Applications

  • Used in power management circuits.
  • Suitable for motor driver stages.
  • Ideal for audio amplifier output.
  • General purpose switching applications.

BD435S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD435S?

32V.

What package is the BD435S available in?

TO-126-3 (also TO-225AA).

What is the maximum operating junction temperature?

150°C.

Is the BD435S RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum collector current?

4A.

What is the power dissipation rating?

36W.

What is the DC current gain (hFE) at 10mA?

Minimum 40 at Ic=10mA, Vce=5V.

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