BD435 NPN bipolar transistor with 32V VCEO and 4A Ic. Suitable for general purpose switching and amplifier applications.
Mfr Part #:

BD435

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN bipolar transistor with 32V VCEO and 4A Ic. Suitable for general purpose switching and amplifier applications.
Total Stock: 7,110 pcs
$ Price Range: $0.06 - $0.12

BD435 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,095 pcs
7095 pcs On Request 1 On Request On Request 02+ On Request On Request
Non-Authorised Inventory information
15 pcs
15 pcs On Request 1 On Request On Request On Request On Request On Request

BD435 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD435 Description

Short technical summary and product information.

The BD435 is an NPN silicon bipolar junction transistor manufactured by STMicroelectronics. It features a maximum collector-emitter voltage (VCEO) of 32V, a maximum collector current (Ic) of 4A, and a power dissipation capability of up to 36W.

 

The transistor offers a DC current gain (hFE) of at least 40 at 10mA collector current and 5V Vce, and a low Vce saturation voltage of 500mV at 200mA base current and 2A collector current. The typical transition frequency (ft) is 3MHz, making it suitable for medium-speed switching and linear amplification.

 

This device is packaged in a through-hole SOT-32-3 package (also known as TO-225AA or TO-126-3), designed for easy mounting on printed circuit boards. The maximum junction temperature is 150°C, and it is specified for operation across a wide temperature range.

BD435 Quick Information

Product Type: Bipolar (BJT) Single Transistor
Canonical Name: BD435 NPN Bipolar Transistor
Subcategory: Single NPN

BD435 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD435 Estimated Pricing

Qty Low High
5+ $0.12 $0.12
50+ $0.09 $0.09
200+ $0.08 $0.08
400+ $0.07 $0.07
2,400+ $0.06 $0.06
5,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD435 Features

  • NPN silicon bipolar junction transistor.
  • Maximum collector-emitter voltage of 32V.
  • Maximum collector current of 4A.
  • Power dissipation up to 36W.
  • Through-hole mounting in SOT-32-3 package.

BD435 Applications

  • General purpose switching circuits.
  • Medium power amplifier stages.
  • Motor and solenoid drivers.
  • Power supply control circuits.
  • Load switching applications.

BD435 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD435?

The maximum collector-emitter voltage (VCEO) is 32V.

What package is the BD435 available in?

It is available in TO-225AA, TO-126-3, and SOT-32-3 through-hole packages.

What is the maximum operating junction temperature of the BD435?

The maximum junction temperature (TJ) is 150°C.

Is the BD435 RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the maximum collector current of the BD435?

The maximum collector current (Ic) is 4A.

What is the DC current gain (hFE) of the BD435?

The minimum DC current gain is 40 at 10mA collector current and 5V Vce.

What is the transition frequency of the BD435?

The typical transition frequency (ft) is 3MHz.

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