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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
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| Operating Temperature | |
| Power | |
| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD435 is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter voltage (Vceo) of 32V, a continuous collector current (Ic) of 4A, and a power dissipation (Pd) of 36W. The device offers a minimum DC current gain (hFE) of 85 at 500mA collector current and 1V collector-emitter voltage. The maximum collector-emitter saturation voltage is 500mV at a base current of 200mA and collector current of 2A. The transition frequency (fT) is 3 MHz.
The BD435 is housed in a TO-225AA / TO-126-3 through-hole package, suitable for PCB mounting. It can operate over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD435 has a collector-emitter voltage (Vceo) rating of 32V.
The maximum continuous collector current (Ic) is 4A.
The power dissipation (Pd) is 36W.
The BD435 is available in a TO-225AA / TO-126-3 through-hole package, with the supplier device package being TO-126.
The operating junction temperature range is -55°C to 150°C.
The minimum DC current gain (hFE) is 85 at a test condition of Ic=500mA and Vce=1V.
The transition frequency (fT) is 3 MHz.