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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,710 pcs
|
1710 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD434S is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and linear amplification applications where medium power and moderate frequency are required.
Key electrical characteristics include a collector-emitter breakdown voltage of 22 V, a continuous collector current rating of 4 A, and a power dissipation of 36 W. The DC current gain (hFE) is minimum 40 when tested at 10 mA collector current and 5 V VCE, while the collector-emitter saturation voltage is limited to 500 mV at a base current of 200 mA and collector current of 2 A. The transition frequency is 3 MHz, and the device can operate with a junction temperature up to 150°C.
The transistor is housed in a TO-225AA / TO-126-3 package, which is a through-hole mounting type. The supplier device package is TO-126-3. It is suitable for designs requiring a compact, cost-effective PNP transistor with reliable performance in medium-power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.42 | $1.42 |
| 10+ | $0.71 | $0.71 |
| 100+ | $0.48 | $0.48 |
| 500+ | $0.39 | $0.39 |
| 1,000+ | $0.35 | $0.35 |
| 2,000+ | $0.29 | $0.29 |
| 4,000+ | $0.28 | $0.28 |
| 10,000+ | $0.27 | $0.27 |
| 24,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
22 V.
TO-126-3 (also available as TO-225AA).
150°C.
RoHS3 Compliant (unverified).
Minimum 40 at Ic=10mA, Vce=5V.
500 mV maximum at Ib=200mA, Ic=2A.
3 MHz.