BD434S PNP bipolar transistor with 22V collector-emitter breakdown voltage and 4A collector current. Housed in a TO-126-3 through-hole package.
Mfr Part #:

BD434S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor with 22V collector-emitter breakdown voltage and 4A collector current. Housed in a TO-126-3 through-hole package.
Total Stock: 1,710 pcs
$ Price Range: $0.26 - $1.42

BD434S Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,710 pcs
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BD434S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD434S Description

Short technical summary and product information.

The BD434S is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and linear amplification applications where medium power and moderate frequency are required.

 

Key electrical characteristics include a collector-emitter breakdown voltage of 22 V, a continuous collector current rating of 4 A, and a power dissipation of 36 W. The DC current gain (hFE) is minimum 40 when tested at 10 mA collector current and 5 V VCE, while the collector-emitter saturation voltage is limited to 500 mV at a base current of 200 mA and collector current of 2 A. The transition frequency is 3 MHz, and the device can operate with a junction temperature up to 150°C.

 

The transistor is housed in a TO-225AA / TO-126-3 package, which is a through-hole mounting type. The supplier device package is TO-126-3. It is suitable for designs requiring a compact, cost-effective PNP transistor with reliable performance in medium-power applications.

BD434S Quick Information

Product Type: PNP Bipolar Transistor
Series: BD434
Canonical Name: BD434S PNP Transistor
Subcategory: Single BJT

BD434S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD434S Estimated Pricing

Qty Low High
1+ $1.42 $1.42
10+ $0.71 $0.71
100+ $0.48 $0.48
500+ $0.39 $0.39
1,000+ $0.35 $0.35
2,000+ $0.29 $0.29
4,000+ $0.28 $0.28
10,000+ $0.27 $0.27
24,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD434S Features

  • PNP transistor with 22V collector-emitter voltage.
  • Rated for 4A continuous collector current.
  • Power dissipation of 36W maximum.
  • Transition frequency of 3MHz typical.
  • Through-hole TO-126-3 package.

BD434S Applications

  • Used in general purpose switching circuits.
  • Suitable for linear amplification stages.
  • Ideal for medium current load drivers.
  • Applicable in power management modules.

BD434S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

22 V.

What is the package type?

TO-126-3 (also available as TO-225AA).

What is the maximum operating junction temperature?

150°C.

Is this part RoHS compliant?

RoHS3 Compliant (unverified).

What is the DC current gain (hFE)?

Minimum 40 at Ic=10mA, Vce=5V.

What is the collector-emitter saturation voltage?

500 mV maximum at Ib=200mA, Ic=2A.

What is the transition frequency?

3 MHz.

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