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75 pcs
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75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD434 is a Silicon PNP Power Transistor from JCET, housed in a TO-126 package. It is designed for medium power linear and switching applications. Key electrical characteristics include a maximum collector current of -4A (DC) and -7A (Peak), with a collector-emitter sustaining voltage of -45V. The transistor offers a DC current gain (hFE) ranging from 30 to 140 depending on the operating conditions.
With a maximum power dissipation of 36W at 25°C (TC) and a junction temperature rating of 150°C, the BD434 is suitable for applications requiring moderate power handling. The operating temperature range is from -65°C to 150°C. The TO-126 package is designed for through-hole mounting.
This transistor is a complement to types BD433/435/437, indicating it can be used in complementary pairs for circuit design. Its specifications make it a viable option for various electronic circuits requiring PNP amplification or switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current (DC) for the BD434 is -4A, and the peak collector current is -7A.
The BD434 transistor comes in a TO-126 package.
The maximum power dissipation for the BD434 transistor is 36W at 25°C (TC).
The BD434 transistor can operate within a temperature range of -65°C to 150°C.
The DC current gain (hFE) for the BD434 varies with conditions, ranging from 30-130 at IC=-10mA, VCE=-5V, and 85-140 at IC=-0.5A, VCE=-1V.
The collector-emitter sustaining voltage (VCEO(SUS)) for the BD434 is -45V when tested at IC=-0.1A and IB=0.