BD433S NPN bipolar transistor with 22V collector-emitter voltage, 4A collector current, and 36W power dissipation in a TO-126-3 through-hole package.
Mfr Part #:

BD433S

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 22V collector-emitter voltage, 4A collector current, and 36W power dissipation in a TO-126-3 through-hole package.
Total Stock: 7,921 pcs
$ Price Range: $0.27 - $1.32

BD433S Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,921 pcs
1921 pcs On Request 1 On Request On Request 10+ On Request On Request

BD433S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD433S Description

Short technical summary and product information.

The BD433S is an NPN bipolar junction transistor manufactured by ON Semiconductor. It features a collector-emitter voltage (Vceo) of 22V, a continuous collector current (Ic) of 4A, and a power dissipation (Pd) of 36W. The DC current gain (hFE) has a minimum value of 40 at Ic=10mA and Vce=5V, and the collector-emitter saturation voltage (Vce sat) is a maximum of 500mV at Ib=200mA and Ic=2A. The transition frequency (ft) is 3MHz.

 

The transistor is designed for through-hole mounting and is available in TO-225AA and TO-126-3 packages, with the supplier device package being TO-126-3. The operating junction temperature is rated up to 150°C. These specifications make the BD433S suitable for general purpose switching and linear amplification applications in medium power circuits.

 

The device is listed as RoHS3 compliant, though this status is unverified. It is also noted as REACH unaffected with an MSL level of 1 (unlimited), both unverified. Users should verify compliance data with the manufacturer for critical applications.

BD433S Quick Information

Product Type: NPN Bipolar Transistor
Series: BD433
Canonical Name: BD433S NPN Bipolar Transistor
Subcategory: NPN

BD433S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD433S Estimated Pricing

Qty Low High
1+ $1.32 $1.32
10+ $0.82 $0.82
100+ $0.54 $0.54
500+ $0.42 $0.42
1,000+ $0.37 $0.37
2,000+ $0.31 $0.31
4,000+ $0.29 $0.29
10,000+ $0.28 $0.28
24,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD433S Features

  • NPN bipolar junction transistor design.
  • 22V collector-emitter voltage rating.
  • 4A continuous collector current capability.
  • 36W power dissipation capacity.
  • Through-hole TO-126-3 package.

BD433S Applications

  • General purpose switching applications.
  • Linear amplification circuits.
  • Medium power driver stages.

BD433S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD433S?

22V.

What is the maximum collector current?

4A.

What is the power dissipation of the BD433S?

36W.

What is the DC current gain (hFE) of the BD433S?

Minimum 40 at Ic=10mA, Vce=5V.

What is the collector-emitter saturation voltage?

Maximum 500mV at Ib=200mA, Ic=2A.

What is the transition frequency of the BD433S?

3MHz.

What package options are available for the BD433S?

TO-225AA and TO-126-3 (supplier device package TO-126-3).

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