| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD250C is a PNP Silicon Power Transistor manufactured by Texas Instruments. It is designed for complementary use with the BD249 series, making it suitable for various power applications.
Key electrical specifications include a continuous collector current of 25A and a peak collector current of 40A. The collector-emitter voltage (V_CER) is rated at -115V with RBE at 100Ω, and the collector-emitter breakdown voltage (V_CEO) is -100V at -30mA. The device can dissipate up to 125W at 25°C case temperature.
Thermal characteristics include an operating junction temperature range of -65°C to +150°C and a storage temperature range of -65°C to +150°C. The transistor is available in a TO-247 package, suitable for through-hole mounting.
Environmental compliance includes RoHS3 compliance, MSL 1, and REACH unaffected status. This transistor is a robust component for power switching and amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 25A.
The collector-emitter breakdown voltage (V_CEO) is -100V.
The maximum power dissipation is 125W.
The operating junction temperature range is -65°C to +150°C.
The BD250C is available in a TO-247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.