| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BD249C is a high-power NPN silicon transistor manufactured by onsemi. It is designed for complementary applications with the BD250 series. This transistor boasts a continuous collector current rating of 25A and a peak collector current of 40A. Its maximum continuous device dissipation is 125W at 25°C case temperature, with a derating of 1W/°C to 150°C.
Key electrical characteristics include a collector-emitter voltage (V_CER) of up to 115V (at RBE = 100 Ω) and a collector-emitter voltage (V_CEO) of up to 100V (at IC = 30mA). The forward current transfer ratio (hFE) is a minimum of 5 at VCE = 4V and IC = 25A. The operating junction and storage temperature range is from -65°C to +150°C.
The BD249C is available in a TO-247 package, suitable for through-hole mounting. Its robust design makes it suitable for various power switching and amplification applications where high current and power handling capabilities are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter voltage is 115V under test conditions RBE = 100 Ω.
The BD249C is packaged in a TO-247 case.
The maximum continuous collector current is 25A.
The maximum emitter-base voltage is 5V.
The collector-emitter breakdown voltage is 100V.
The operating junction temperature range is -65°C to +150°C.
Yes, it is RoHS3 compliant.