BD249C The BD249C is an NPN Silicon Power Transistor from ST, designed for complementary use with the BD250 series. It offers a continuous collector current of 25A and a maximum power dissipation of 125W.
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BD249C

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BD249C is an NPN Silicon Power Transistor from ST, designed for complementary use with the BD250 series. It offers a continuous collector current of 25A and a maximum power dissipation of 125W.
✓ Total Stock: 2,686 pcs
$ Price Range: $1.88

BD249C Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,686 pcs
2686 pcs On Request 1 On Request On Request On Request On Request On Request

BD249C Specifications Quick View

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BD249C Description

Short technical summary and product information.

The BD249C is an NPN Silicon Power Transistor manufactured by ST, designed for high-power applications. It is intended for complementary use with the BD250 series transistors.

 

Key electrical specifications include a collector-emitter voltage (Vcer) of 115V and a continuous collector current (Ic) of 25A. The device can handle a peak collector current of 40A and a continuous base current of 5A. Its power dissipation capability is rated at 125W at 25°C case temperature.

 

Thermal characteristics include an operating junction temperature range of -65°C to +150°C and a storage temperature range of -65°C to +150°C. The transistor is available in a SOT-93 package, also referred to as TO-247.

 

This power transistor is suitable for various power switching and amplification circuits where robust performance and high current handling are required.

BD249C Quick Information

Product Type: NPN Silicon Power Transistor
Canonical Name: BD249C NPN Silicon Power Transistor
Subcategory: NPN

BD249C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD249C Estimated Pricing

Qty Low High
1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD249C Features

  • NPN Silicon Power Transistor
  • 115V Collector-Emitter Voltage (Vcer)
  • 25A Continuous Collector Current (Ic)
  • 125W Maximum Power Dissipation (Pd)
  • Complementary to BD250 Series

BD249C Applications

  • High power switching circuits
  • Audio amplifier output stages
  • Complementary push-pull applications
  • General purpose power applications

BD249C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the BD249C?

The collector-emitter voltage (V_CER) is 115 V at RBE = 100 Ω.

What is the maximum emitter-base voltage for the BD249C?

The maximum emitter-base voltage (V_EBO) is 5 V.

What is the continuous collector current supported by the BD249C?

The device supports a continuous collector current of 25 A.

What package does the BD249C come in?

The BD249C is packaged in a SOT-93 package.

What is the operating temperature range for the BD249C?

The operating junction temperature range is -65°C to +150°C.

Is the BD249C RoHS compliant?

Yes, it is RoHS3 compliant.

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