| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,686 pcs
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2686 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD249C is an NPN Silicon Power Transistor manufactured by ST, designed for high-power applications. It is intended for complementary use with the BD250 series transistors.
Key electrical specifications include a collector-emitter voltage (Vcer) of 115V and a continuous collector current (Ic) of 25A. The device can handle a peak collector current of 40A and a continuous base current of 5A. Its power dissipation capability is rated at 125W at 25°C case temperature.
Thermal characteristics include an operating junction temperature range of -65°C to +150°C and a storage temperature range of -65°C to +150°C. The transistor is available in a SOT-93 package, also referred to as TO-247.
This power transistor is suitable for various power switching and amplification circuits where robust performance and high current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (V_CER) is 115 V at RBE = 100 Ω.
The maximum emitter-base voltage (V_EBO) is 5 V.
The device supports a continuous collector current of 25 A.
The BD249C is packaged in a SOT-93 package.
The operating junction temperature range is -65°C to +150°C.
Yes, it is RoHS3 compliant.