SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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13 pcs
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13 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD245C from Bourns is an NPN Silicon Power Transistor housed in a SOT-93 package. This device is designed for complementary use with the BD246 series, offering robust performance for power applications.
Key electrical characteristics include a continuous collector current of 10A and a peak collector current of 15A. The transistor can handle a continuous device dissipation of up to 80W at a 25°C case temperature, with linear derating to 150°C. The collector-emitter voltage rating (V_CER) for the BD245C is 115V when the base-emitter resistance (RBE) is 100 Ω, and the collector-emitter voltage rating (V_CEO) is 100V when the collector current is 30mA.
With an operating junction temperature range of -65°C to +150°C and a storage temperature range also from -65°C to +150°C, the BD245C is suitable for demanding environments. The transistor is packaged in a SOT-93 case, with pin 2 in electrical contact with the mounting base.
This power transistor is suitable for various power switching and amplification applications where high current and voltage handling capabilities are required.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current for the BD245C is 10A.
The continuous device dissipation at or below 25°C case temperature is 80W.
The collector-emitter voltage rating (V_CER) for the BD245C is 115V when RBE is 100 Ω, and the collector-emitter voltage rating (V_CEO) is 100V when IC is 30mA.
The operating junction temperature range is -65°C to +150°C.
The BD245C is available in the SOT-93 package.
