BD244CG PNP bipolar junction transistor with 100V collector-emitter breakdown, 6A continuous collector current, and 65W power dissipation. Packaged in through-hole TO-220 with operating temperature range -65°C to 150°C.
Mfr Part #:

BD244CG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar junction transistor with 100V collector-emitter breakdown, 6A continuous collector current, and 65W power dissipation. Packaged in through-hole TO-220 with operating temperature range -65°C to 150°C.
Total Stock: 6,627 pcs
$ Price Range: $0.80 - $2.07

BD244CG Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,220 pcs
5220 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,407 pcs
1407 pcs On Request 1 On Request On Request On Request On Request On Request

BD244CG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD244CG Description

Short technical summary and product information.

The BD244CG is a PNP silicon power transistor designed for general-purpose amplifier and switching applications. It features a collector-emitter breakdown voltage of 100V and a continuous collector current rating of 6A, making it suitable for medium-power circuits.

 

Key electrical characteristics include a minimum DC current gain (hFE) of 15 at Ic=3A and Vce=4V, a maximum collector-emitter saturation voltage of 1.5V at Ib=1A and Ic=6A, and a transition frequency of at least 3MHz. The device can dissipate up to 65W at case temperature 25°C, with a derating factor of 0.52W/°C above that.

 

The transistor is housed in a TO-220 package with through-hole mounting, providing good thermal performance for power applications. It operates over a junction temperature range of -65°C to 150°C. The part is Pb-Free and RoHS compliant per the datasheet.

 

Typical applications include output stages in amplifiers, power switching circuits, and general-purpose line drivers. The complementary NPN counterpart is the BD243C.

BD244CG Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: PNP Bipolar Junction Transistor, 100V, 6A, TO-220
Subcategory: Power Transistor

BD244CG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BD244CG Estimated Pricing

Qty Low High
1+ $2.07 $2.07
10+ $1.23 $1.23
100+ $0.80 $0.80

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD244CG Features

  • PNP silicon power transistor for general purpose.
  • 100V collector-emitter breakdown voltage.
  • 6A continuous collector current rating.
  • 65W power dissipation at 25°C case.
  • TO-220 through-hole package for easy mounting.

BD244CG Applications

  • Used in general-purpose amplifier output stages.
  • Suitable for power switching circuits.
  • Complementary pair with NPN BD243C.
  • For medium-power linear applications.

BD244CG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BD244CG?

100V.

What is the package type?

TO-220 (through-hole).

What is the operating temperature range?

-65°C to 150°C (junction).

Is the BD244CG RoHS compliant?

The datasheet states it is Pb-Free and RoHS Compliant, but this is unverified.

What is the maximum continuous collector current?

6A.

What is the maximum power dissipation?

65W at TC=25°C.

What is the minimum DC current gain?

15 at Ic=3A, Vce=4V.

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