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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14 pcs
|
14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Base-Emitter Voltage (VBE) | |
| Collector Cutoff Current (Maximum @ Ib = 0, Vce = 60 V) | |
| Collector Cutoff Current (Maximum @ Vbe = 0, Vce = rated Vceo) | |
| Collector Peak Current | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Sustaining Voltage (VCEO(sus)) | |
| Collector-Emitter Voltage (VCEO) | |
| Current | |
| DC Current Gain (Minimum @ Ic = 0.3 A, Vce = 4 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Small Signal Current Gain (Minimum @ IC = 0.5 A, VCE = 10 V, f = 1 MHz) | |
| Small Signal Current Gain (Minimum @ IC = 0.5 A, VCE = 10 V, f = 1 kHz) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance (Junction-Ambient) | |
| Thermal Resistance Junction-Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD244C is a PNP silicon power transistor from STMicroelectronics, designed for medium power linear and switching applications. It is the complementary type to the NPN BD243C.
Key electrical specifications include a collector-emitter voltage (VCEO) of 100V, a continuous collector current of 6A (10A peak), and a power dissipation of 65W at case temperatures up to 25°C. The DC current gain (hFE) is a minimum of 15 at 3A collector current and 4V collector-emitter voltage. The collector-emitter saturation voltage is typically 1.5V at 6A collector current and 1A base current.
The transistor is housed in a standard TO-220-3 through-hole package, suitable for mounting on heatsinks. The junction-to-case thermal resistance is 1.92°C/W, and the maximum operating junction temperature is 150°C. Storage temperature range is -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V (VCEO).
6A continuous, 10A peak.
65W at case temperature ≤25°C.
TO-220-3 (through-hole).
Maximum 150°C.
RoHS3 compliant (unverified).
Minimum 15 at IC=3A, VCE=4V.