| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD244BG is a PNP silicon power transistor from ON Semiconductor, designed for general purpose amplifier and switching applications. It offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current of 6A, with a peak current capability of 10A. The device provides a minimum DC current gain of 30 at 0.3A and 15 at 3A, and a low collector-emitter saturation voltage of 1.5V at 1A base current. With a transition frequency of 3 MHz, it is suitable for medium-speed switching. The transistor can dissipate up to 65W at a case temperature of 25°C, with a junction-to-case thermal resistance of 1.92°C/W. It operates over a junction temperature range of -65°C to 150°C. The BD244BG is housed in a TO-220-3 through-hole package and is RoHS compliant and Pb-free.
The maximum collector-emitter voltage (VCEO) is 80V.
The BD244BG is available in a TO-220-3 through-hole package.
The operating junction temperature range is -65°C to 150°C.
Yes, the BD244BG is RoHS compliant and Pb-free as per the datasheet.
The continuous collector current (IC) is 6A.
The maximum power dissipation is 65W at case temperature 25°C.
The minimum DC current gain is 30 at Ic=0.3A, Vce=4V, and 15 at Ic=3A, Vce=4V.