BD244BG BD244BG is a PNP bipolar power transistor from ON Semiconductor. It features a collector-emitter voltage of 80V, continuous collector current of 6A, and is housed in a TO-220 package.
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BD244BG

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Mfr Name: On Semiconductor
On Semiconductor
BD244BG is a PNP bipolar power transistor from ON Semiconductor. It features a collector-emitter voltage of 80V, continuous collector current of 6A, and is housed in a TO-220 package.
Total Stock: 9 pcs

BD244BG Available from 1 distributor

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BD244BG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter On Voltage (VBE(on)) (Max @ Ic=6A, Vce=4V)
Collector Current - Peak
Collector Cutoff Current (ICEO) (Max @ Vce=60V)
Collector Cutoff Current (ICES) (Max @ Vce=80V)
Collector-Base Voltage (VCB)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (IEBO) (Max @ Vbe=5V)
Emitter-Base Voltage (VEB)
Frequency
Hfe Min (Minimum @ Ic=0.3 A, Vce=4 V)
Lead Style
Mounting Type
Operating Temperature
Power
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD244BG Description

Short technical summary and product information.

The BD244BG is a PNP silicon power transistor from ON Semiconductor, designed for general purpose amplifier and switching applications. It offers a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current of 6A, with a peak current capability of 10A. The device provides a minimum DC current gain of 30 at 0.3A and 15 at 3A, and a low collector-emitter saturation voltage of 1.5V at 1A base current. With a transition frequency of 3 MHz, it is suitable for medium-speed switching. The transistor can dissipate up to 65W at a case temperature of 25°C, with a junction-to-case thermal resistance of 1.92°C/W. It operates over a junction temperature range of -65°C to 150°C. The BD244BG is housed in a TO-220-3 through-hole package and is RoHS compliant and Pb-free.

BD244BG Quick Information

Product Type: Bipolar Power Transistor
Series: BD244
Canonical Name: BD244BG PNP Bipolar Power Transistor, 80V, 6A, TO-220
Subcategory: Single BJT

BD244BG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BD244BG Features

  • PNP bipolar power transistor in TO-220 package.
  • Rated for 80V collector-emitter voltage.
  • Continuous collector current up to 6A.
  • Maximum power dissipation of 65W.
  • RoHS compliant and Pb-free.

BD244BG Applications

  • Used in general purpose amplifier circuits.
  • Suitable for switching applications.
  • Applied in power management systems.
  • Ideal for audio output stages.

BD244BG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD244BG?

The maximum collector-emitter voltage (VCEO) is 80V.

What package does the BD244BG come in?

The BD244BG is available in a TO-220-3 through-hole package.

What is the operating temperature range of the BD244BG?

The operating junction temperature range is -65°C to 150°C.

Is the BD244BG RoHS compliant?

Yes, the BD244BG is RoHS compliant and Pb-free as per the datasheet.

What is the continuous collector current rating?

The continuous collector current (IC) is 6A.

What is the power dissipation of the BD244BG?

The maximum power dissipation is 65W at case temperature 25°C.

What is the DC current gain (hFE)?

The minimum DC current gain is 30 at Ic=0.3A, Vce=4V, and 15 at Ic=3A, Vce=4V.

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