| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD243C is an NPN Epitaxial Silicon Transistor manufactured by CDIL, suitable for medium power linear and switching applications. This component is the complement to the BD244C. It is housed in a TO-220 package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 100V for the BD243C variant, a maximum continuous collector current (IC) of 6A, and a pulse collector current of 10A. The maximum base current (IB) is 2A, and the device can dissipate up to 65W at 25°C case temperature. The junction temperature is rated up to 150°C, with storage temperatures ranging from -65°C to 150°C.
Electrical specifications also include a minimum DC current gain (hFE) of 30 at IC=0.3A and 15 at IC=3A. The collector emitter saturation voltage (VCE(sat)) is a maximum of 2V at IC=6A and IB=1A, and the base emitter on voltage (VBE(on)) is a maximum of 1.5V at IC=6A.
This transistor is designed for general-purpose amplification and switching. Its TO-220 package is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD243C is 100V.
The continuous collector current (IC) rating for the BD243C is 6A.
The BD243C is supplied in a TO-220 package.
The maximum junction temperature (TJ) for the BD243C is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.