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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,498 pcs
|
17498 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,684 pcs
|
2684 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current (IB) | |
| Base-Emitter Voltage (VBE) | |
| Collector Cutoff Current (Maximum @ Ib = 0, Vce = 60 V) | |
| Collector Cutoff Current (Maximum @ Vbe = 0, Vce = rated Vceo) | |
| Collector Peak Current (ICM) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Ic = 0.3 A, Vce = 4 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cut-off Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature (Tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction-Ambient (Rthj-amb) | |
| Thermal Resistance Junction-Case (Rthj-case) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD243C is an NPN silicon epitaxial-base power transistor manufactured by STMicroelectronics. It is designed for medium power linear and switching applications, offering a collector-emitter voltage rating of 100V and a continuous collector current of 6A (10A peak). The device dissipates up to 65W at case temperatures up to 25°C, making it suitable for power control circuits.
Key electrical characteristics include a DC current gain (hFE) of 30 minimum at 0.3A collector current and 15 minimum at 3A, with a collector-emitter saturation voltage of 1.5V maximum at 6A. The transistor operates at junction temperatures up to 150°C and has a storage temperature range of -65°C to 150°C. Thermal resistance is rated at 1.92°C/W junction-to-case and 62.5°C/W junction-to-ambient.
The BD243C is mounted in a standard TO-220-3 through-hole package, suitable for PCB mounting with a heatsink for high-power applications. It is the complementary NPN type to the BD244C PNP transistor, allowing use in push-pull and bridge configurations. The device is intended for medium power linear amplifiers, switching regulators, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 100V.
The maximum continuous collector current is 6A, with a peak current of 10A.
The total power dissipation is 65W at case temperature up to 25°C.
The BD243C is available in a TO-220-3 through-hole package.
The maximum operating junction temperature is 150°C, with storage temperature from -65°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.