BD243B BD243B is an NPN bipolar transistor from On Semiconductor. It offers an 80V collector-emitter voltage rating, 6A collector current, and 65W power dissipation in a TO-220-3 package.
Mfr Part #:

BD243B

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
BD243B is an NPN bipolar transistor from On Semiconductor. It offers an 80V collector-emitter voltage rating, 6A collector current, and 65W power dissipation in a TO-220-3 package.
Total Stock: 3,553 pcs
$ Price Range: $6.25

BD243B Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,222 pcs
3222 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
331 pcs
331 pcs On Request 1 On Request On Request On Request On Request On Request

BD243B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD243B Description

Short technical summary and product information.

The BD243B is an NPN bipolar junction transistor manufactured by On Semiconductor. It is rated for a collector-emitter voltage of 80V and a continuous collector current of 6A, with a power dissipation of 65W. The device is available in a TO-220-3 through-hole package.

 

The transistor exhibits a minimum DC current gain (hFE) of 15 at a collector current of 3A and a collector-emitter voltage of 4V. The maximum collector-emitter saturation voltage is 1.5V at a base current of 1A and a collector current of 6A. These characteristics define its behavior in both active and saturated operation.

 

The TO-220-3 package is suitable for through-hole PCB mounting and allows the attachment of an external heat sink to manage the 65W power dissipation. The maximum junction temperature is rated at 150°C, and the component is designed for through-hole assembly in power switching and amplification circuits.

BD243B Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: BD243B NPN Bipolar Transistor
Subcategory: Single Bipolar Transistor

BD243B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BD243B Estimated Pricing

Qty Low High
48+ $6.25 $6.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD243B Features

  • NPN silicon bipolar junction transistor.
  • Rated for 80V collector-emitter voltage.
  • Supports 6A continuous collector current.
  • Capable of 65W power dissipation.
  • Supplied in TO-220-3 through-hole package.

BD243B Applications

  • Used in general purpose power switching.
  • Ideal for audio amplifier output stages.
  • Can drive relays and solenoids.
  • Used in motor control applications.

BD243B FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD243B?

The BD243B has a collector-emitter voltage (Vceo) rating of 80V.

What package is the BD243B available in?

The BD243B is offered in a TO-220-3 through-hole package.

What is the maximum operating junction temperature?

The maximum junction temperature (Tj) is 150°C.

Is the BD243B RoHS compliant?

The database lists the BD243B as RoHS3 compliant, though this is unverified.

What is the maximum collector current rating?

The collector current (Ic) rating is 6A.

What is the power dissipation rating?

The BD243B can dissipate up to 65W.

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 15 at Ic=3A and Vce=4V.

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