BD242C The BD242C is a PNP silicon power transistor from onsemi designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage, 3A continuous collector current, and 40W power dissipation in a TO-220 package.
Mfr Part #:

BD242C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD242C is a PNP silicon power transistor from onsemi designed for general purpose amplifier and switching applications. It features a 100V collector-emitter voltage, 3A continuous collector current, and 40W power dissipation in a TO-220 package.
Total Stock: 73 pcs
$ Price Range: $0.30

BD242C Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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73 pcs
73 pcs On Request 1 On Request On Request On Request On Request On Request

BD242C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector-Emitter Voltage (VCEO)
Collector-Emitter Voltage (VCES)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Human Body Model
ESD Machine Model
Emitter-Base Voltage (VEB)
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD242C Description

Short technical summary and product information.

The BD242C is a PNP silicon plastic power transistor manufactured by onsemi (formerly ON Semiconductor). It is designed for use in general purpose amplifier and switching applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 100V, a maximum collector-emitter voltage (VCES) of 115V, and a continuous collector current rating of 3A with a peak current capability of 5A. The device offers a DC current gain (hFE) of 25 minimum at 1A and 4V, and a transition frequency of 3 MHz. Maximum power dissipation is 40W at a case temperature of 25°C.

 

The BD242C is housed in a compact TO-220-3 through-hole package, suitable for PCB mounting. The epoxy meets UL94 V-0 flammability rating. The device is Pb-Free and RoHS compliant.

BD242C Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BD242C PNP Bipolar Power Transistor
Subcategory: Single PNP

BD242C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BD242C Estimated Pricing

Qty Low High
1,650+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD242C Features

  • PNP silicon power transistor for general purpose use.
  • 100V maximum collector-emitter voltage (VCEO).
  • 3A continuous collector current rating.
  • 40W power dissipation at 25°C case temperature.
  • Compact TO-220-3 through-hole package.

BD242C Applications

  • General purpose amplifier and switching circuits.
  • Medium power linear and switching applications.
  • Power management and driver stages.

BD242C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BD242C?

The maximum VCEO is 100V.

What is the continuous collector current rating of the BD242C?

The continuous collector current (IC) is 3A maximum.

What is the power dissipation of the BD242C?

The maximum power dissipation is 40W at a case temperature of 25°C.

What package does the BD242C come in?

The BD242C is available in a TO-220-3 through-hole package.

Is the BD242C RoHS compliant?

Yes, the BD242C is RoHS compliant and Pb-Free as stated in the datasheet.

What is the operating temperature range for the BD242C?

The operating junction temperature range is -65°C to 150°C.

What is the DC current gain (hFE) of the BD242C?

The minimum hFE is 25 at a test condition of Ic=1A and Vce=4V.

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