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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,648 pcs
|
31648 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD241CTU is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. With a maximum collector-emitter voltage (Vce) of 100V and continuous collector current (Ic) rating of 3A, it can handle moderate power loads. The transistor offers a DC current gain (hFE) of 25 minimum at Ic=1A and Vce=4V, and a collector-emitter saturation voltage (Vce(sat)) of 1.2V maximum at Ib=600mA and Ic=3A.
Housed in a TO-220-3 through-hole package, the BD241CTU is suitable for PCB mounting with a power dissipation of 40W. The junction temperature rating is up to 150°C, allowing operation in thermally challenging environments. This transistor is commonly used in linear amplification stages, power management circuits, and medium-speed switching applications.
The BD241CTU is manufactured by ON Semiconductor and is RoHS3 compliant, meeting environmental standards. Its through-hole mounting facilitates easy prototyping and manual assembly.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100V.
It comes in a TO-220-3 through-hole package.
The maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.
The minimum hFE is 25 at Ic=1A and Vce=4V.
The maximum Vce(sat) is 1.2V at Ib=600mA and Ic=3A.