| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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585 pcs
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585 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor BD239CTU is a single NPN bipolar junction transistor (BJT) designed for various circuit applications. It offers a maximum DC collector current of 2A and a maximum collector-emitter voltage (Vceo) of 115V.
Key electrical specifications include a maximum collector-base voltage (VCBO) of 100V, a maximum power dissipation (Pd) of 30W, a minimum DC current gain (hFE) of 40, and a maximum emitter-base voltage (VEBO) of 5V. The transistor operates within a maximum temperature of 150°C.
Packaged in a TO-220 through-hole configuration, the BD239CTU has dimensions of 10.1mm in length and 29.33mm in height. Its robust design and specifications make it suitable for power switching and amplification tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
2A.
115V.
TO-220 through-hole.
150°C.
30W.