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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD239A is a low frequency power silicon NPN transistor manufactured by Texas Instruments. It is designed for applications requiring a breakdown voltage of 80V (Vcbo) and can handle a continuous collector current (Ic) of up to 2.0A. The transistor operates within a temperature range of 0 to 150°C.
This component is supplied in a TO-220AB package, which is suitable for through-hole mounting. Its specifications make it a suitable choice for various general-purpose amplification and switching tasks in electronic circuits.
Key electrical characteristics include a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 2.0A. The operating temperature range is from 0°C to 150°C, providing flexibility for different environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD239A transistor operates from 0 to 150°C.
The collector-emitter breakdown voltage (Vcbo) for the BD239A is 80V.
The continuous collector current (Ic) rating for the BD239A is 2.0A.
The BD239A transistor is supplied in a TO-220AB package.