BD238G BD238G is a PNP bipolar transistor from onsemi with 80V VCEO, 2A collector current, and 25W power dissipation. It is housed in a TO-126 through-hole package.
Mfr Part #:

BD238G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BD238G is a PNP bipolar transistor from onsemi with 80V VCEO, 2A collector current, and 25W power dissipation. It is housed in a TO-126 through-hole package.
Total Stock: 3,569 pcs

BD238G Available from 1 distributor

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BD238G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Base-Emitter On Voltage (VBE(on)) (Ic=1A, Vce=2V)
Collector-Base Voltage (VCBO)
Current
Current-Gain Bandwidth Product (fT) (Ic=250mA, Vce=10V, f=1MHz)
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Minimum @ Ic=1 A, Vce=2 V)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD238G Description

Short technical summary and product information.

The BD238G is a PNP bipolar junction transistor manufactured by onsemi. It is designed for medium power amplification and switching applications, offering a collector-emitter voltage rating of 80V and a collector current rating of 2A. The device dissipates up to 25W of power, making it suitable for audio amplifier output stages and driver circuits.

 

The transistor features a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage, and a minimum hFE of 25 at 1A. The saturation voltage is 600mV at 1A collector current with 100mA base current. The device has a transition frequency of 3MHz.

 

The BD238G is available in a TO-225AA (TO-126) through-hole package, which facilitates easy mounting on PCBs. It operates over a junction temperature range of -55°C to 150°C. The device is Pb-free and RoHS compliant, aligning with modern environmental standards.

 

This transistor is commonly used in complementary audio output stages, medium power switching, and general purpose amplification. Its complementary NPN counterpart is the BD237G, enabling straightforward design of push-pull amplifier configurations.

BD238G Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: PNP Bipolar Transistor, 80V, 2A, TO-126
Subcategory: Single

BD238G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

BD238G Features

  • PNP bipolar transistor with 80V VCEO.
  • 2A continuous collector current rating.
  • 25W power dissipation at 25°C case.
  • TO-126 through-hole package for easy mounting.
  • RoHS compliant and Pb-free per datasheet.

BD238G Applications

  • Ideal for audio amplifier output stages.
  • Used in medium power switching circuits.
  • Suitable for driver and amplification stages.

BD238G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BD238G?

The BD238G has a maximum collector-emitter voltage (VCEO) of 80V.

What package is the BD238G available in?

The BD238G is available in a TO-225AA (TO-126) through-hole package.

What is the operating temperature range of the BD238G?

The BD238G operates over a junction temperature range of -55°C to 150°C.

Is the BD238G RoHS compliant?

Yes, the BD238G is RoHS compliant and Pb-free per the onsemi datasheet.

What is the maximum collector current of the BD238G?

The BD238G can handle a maximum collector current of 2A.

What is the DC current gain (hFE) of the BD238G?

The minimum hFE is 40 at IC=150mA and VCE=2V; at IC=1A, VCE=2V, the minimum hFE is 25.

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