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BD238 The BD238 is a PNP low voltage power transistor from STMicroelectronics with VCEO of -80 V, continuous collector current of -2 A, and 25 W power dissipation in a SOT-32-3 (TO-126) through-hole package.
Mfr Part #:

BD238

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BD238 is a PNP low voltage power transistor from STMicroelectronics with VCEO of -80 V, continuous collector current of -2 A, and 25 W power dissipation in a SOT-32-3 (TO-126) through-hole package.
✓ Total Stock: 123 pcs
$ Price Range: $0.30

BD238 Available from 2 distributors

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✓ Non-Authorised
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Braun Electronic Components ✓
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110 pcs
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110 pcs On Request 1 On Request On Request On Request On Request On Request
Partservice ✓
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13 pcs
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13 pcs On Request 1 On Request On Request On Request On Request On Request
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BD238 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BD238 Description

Short technical summary and product information.

The BD238 is a PNP bipolar power transistor designed for low voltage applications. It features a collector-emitter breakdown voltage (VCEO) of -80 V and a continuous collector current rating of -2 A, with peak current capability up to -6 A. The device offers low saturation voltage, with VCE(sat) maximum of 0.6 V at 1 A, and high DC current gain (hFE minimum 40 at 150 mA, 25 at 1 A).

 

With a total power dissipation of 25 W at case temperature 25°C and a maximum operating junction temperature of 150°C, this transistor is suitable for audio, power linear and switching applications. The transistor is manufactured using planar technology with 'Base Island' layout, providing exceptional high gain performance coupled with very low saturation voltage.

 

The BD238 is available in a SOT-32-3 (TO-126) through-hole package, which is also compatible with TO-225AA and TO-126-3 footprints. It is supplied in tube packaging. The complementary NPN type is the BD237.

BD238 Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single PNP
Canonical Name: BD238 PNP Low Voltage Power Transistor
Subcategory: Single PNP Power Transistor

BD238 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD238 Estimated Pricing

Qty Low High
4,000+ $0.30 $0.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD238 Features

  • PNP low voltage power transistor.
  • Collector-emitter breakdown voltage -80 V.
  • Continuous collector current -2 A.
  • Low saturation voltage (max 0.6 V at 1 A).
  • 25 W power dissipation capability.

BD238 Applications

  • Suitable for audio amplifier output stages.
  • Used in power linear regulation circuits.
  • Ideal for low frequency switching applications.
  • Can drive inductive loads in moderate power designs.

BD238 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BD238?

The collector-emitter breakdown voltage (VCEO) is -80 V (minimum). The collector-emitter voltage with RBE=1kΩ (VCER) is -100 V.

What package options are available for BD238?

The BD238 is available in TO-225AA, TO-126-3 (SOT-32-3) through-hole packages, supplied in tube packaging.

What is the operating temperature range of BD238?

The storage temperature range is -65°C to 150°C, and the maximum operating junction temperature is 150°C.

Is BD238 RoHS compliant?

The BD238 is listed as RoHS3 Compliant, but this information is unverified from the source data.

What is the DC current gain (hFE) of BD238?

The minimum hFE is 40 at IC = -150 mA, VCE = -2 V, and 25 at IC = -1 A, VCE = -2 V.

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