BD237STU NPN bipolar transistor with 80V collector-emitter breakdown voltage and 2A collector current. Housed in a TO-126-3 through-hole package.
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BD237STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 80V collector-emitter breakdown voltage and 2A collector current. Housed in a TO-126-3 through-hole package.
✓ Total Stock: 2,600 pcs

BD237STU Available from 1 distributor

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BD237STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD237STU Description

Short technical summary and product information.

The BD237STU is an NPN bipolar junction transistor designed for general purpose switching and amplification applications. It features a collector-emitter breakdown voltage (Vceo) of 80V and a continuous collector current (Ic) rating of 2A, with a maximum power dissipation of 25W.

 

Electrical characteristics include a minimum DC current gain (hFE) of 25 at Ic=1A and Vce=2V, and a low collector-emitter saturation voltage (Vce(sat)) of 0.6V maximum at Ib=100mA and Ic=1A. The transition frequency (ft) is 3 MHz, making it suitable for medium-frequency circuits.

 

The transistor is housed in a TO-126-3 through-hole package (also known as TO-225AA), which provides adequate thermal performance for its power rating. The maximum junction temperature is 150°C. The part is listed as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.

BD237STU Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: BD237STU NPN Bipolar Transistor
Subcategory: NPN Transistor

BD237STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BD237STU Features

  • NPN bipolar junction transistor design.
  • 80V collector-emitter breakdown voltage.
  • 2A continuous collector current rating.
  • 25W maximum power dissipation.
  • Through-hole TO-126-3 package.

BD237STU Applications

  • General purpose switching circuits.
  • Linear amplification stages.
  • Medium power driver applications.
  • Signal amplification and switching.

BD237STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BD237STU?

The collector-emitter breakdown voltage (Vceo) is 80V.

What is the maximum collector current rating?

The maximum continuous collector current (Ic) is 2A.

What is the maximum power dissipation?

The maximum power dissipation is 25W.

What package does the BD237STU come in?

It is available in a TO-126-3 (TO-225AA) through-hole package.

What is the operating junction temperature range?

The maximum operating junction temperature is 150°C.

What is the DC current gain (hFE) at 1A, 2V?

The minimum DC current gain (hFE) is 25 at Ic=1A and Vce=2V.

Is the BD237STU RoHS compliant?

It is listed as RoHS3 compliant, but this compliance data is unverified.

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