BD237 BD237 is an NPN power transistor from STMicroelectronics with 80V collector-emitter voltage, 2A collector current, and 25W power dissipation. It comes in a through-hole SOT-32 package.
Mfr Part #:

BD237

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
BD237 is an NPN power transistor from STMicroelectronics with 80V collector-emitter voltage, 2A collector current, and 25W power dissipation. It comes in a through-hole SOT-32 package.
✓ Total Stock: 35,741 pcs
$ Price Range: $0.16 - $0.90

BD237 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
31,800 pcs
31800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,763 pcs
3763 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
178 pcs
178 pcs On Request 1 On Request On Request On Request On Request On Request

BD237 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD237 Description

Short technical summary and product information.

BD237 is a low voltage NPN power transistor manufactured by STMicroelectronics using Planar technology with Base Island layout. It features low saturation voltage and high DC current gain, making it suitable for audio, power linear, and switching applications.

 

Key electrical characteristics include a minimum collector-emitter breakdown voltage (VCEO) of 80V, maximum collector current of 2A (6A peak), and a total power dissipation of 25W at case temperature 25°C. The DC current gain (hFE) is at least 40 at 150mA and 25 at 1A. The collector-emitter saturation voltage is 600mV maximum at 1A collector current and 100mA base current. The junction temperature can reach up to 150°C.

 

The transistor is offered in through-hole mounting with package options TO-225AA or TO-126-3 (supplier device package SOT-32-3). Storage temperature ranges from -65°C to 150°C.

BD237 Quick Information

Product Type: Bipolar Transistor
Series: BD237
Canonical Name: BD237 NPN Bipolar Transistor
Subcategory: Single

BD237 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD237 Estimated Pricing

Qty Low High
1+ $0.90 $0.90
10+ $0.41 $0.41
100+ $0.36 $0.36
500+ $0.28 $0.28
1,000+ $0.25 $0.25
2,000+ $0.23 $0.23
4,000+ $0.22 $0.22
12,000+ $0.19 $0.19
24,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD237 Features

  • Low saturation voltage design.
  • High DC current gain at 1A.
  • Operating junction temperature up to 150°C.
  • Through-hole SOT-32 package.
  • Designed for audio and switching applications.

BD237 Applications

  • Audio amplifier output stages.
  • Power linear applications.
  • General purpose switching circuits.
  • Power management in consumer electronics.

BD237 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of BD237?

The minimum collector-emitter breakdown voltage (VCEO) is 80 V.

What package is the BD237 available in?

It is available in TO-225AA or TO-126-3 (supplier package SOT-32-3) through-hole packages.

What is the maximum junction temperature of BD237?

The maximum operating junction temperature is 150°C.

What is the DC current gain (hFE) of BD237?

Minimum hFE is 40 at Ic=150mA, Vce=2V, and 25 at Ic=1A, Vce=2V.

What is the maximum collector current of BD237?

The maximum continuous collector current is 2 A, with peak current up to 6 A (tp < 1 ms).

What is the collector-emitter saturation voltage of BD237?

Maximum saturation voltage is 600 mV at Ic=1A, Ib=100mA.

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