BD234G PNP bipolar transistor with 45V collector-emitter voltage, 2A collector current, and 25W power dissipation. Through-hole TO-126 package.
Mfr Part #:

BD234G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
PNP bipolar transistor with 45V collector-emitter voltage, 2A collector current, and 25W power dissipation. Through-hole TO-126 package.
Total Stock: 480 pcs
$ Price Range: $0.55

BD234G Available from 1 distributor

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BD234G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Base-Emitter On Voltage (VBE(ON))
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum @ IC = 0.15 A, VCE = 2.0 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
ESD Rating (Human Body Model)
ESD Rating - Machine Model
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD234G Description

Short technical summary and product information.

The BD234G from onsemi is a PNP bipolar junction transistor designed for medium power amplification and switching applications. With a collector-emitter voltage rating of 45V and a collector current capacity of 2A, this device can dissipate up to 25W when mounted to a suitable heatsink. It features a high DC current gain (hFE) of 40 at 150mA and 25 at 1A, ensuring efficient current amplification in linear circuits.

 

This transistor is specifically tailored for use in 5.0 to 10W audio amplifiers and drivers, particularly in complementary or quasi-complementary circuit topologies. The low collector-emitter saturation voltage (600mV max at 1A) minimizes power loss, while the base-emitter on voltage is typically 1.3V. The device also includes built-in ESD protection rated at Class 3B (HBM) and Class C (MM).

 

Packaged in a through-hole TO-126 (TO-225AA) case, the BD234G offers easy mounting on standard PCBs. The operating junction temperature ranges from -55°C to 150°C, with a thermal resistance of 5.0°C/W from junction to case. The part is RoHS3 compliant and lead-free (Pb-Free), meeting environmental regulations.

BD234G Quick Information

Product Type: PNP Bipolar Transistor
Canonical Name: BD234G PNP Bipolar Transistor
Subcategory: Single BJT Transistors

BD234G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BD234G Estimated Pricing

Qty Low High
547+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD234G Features

  • PNP silicon medium power transistor.
  • 45V collector-emitter breakdown voltage.
  • 2A continuous collector current rating.
  • High DC current gain (hFE up to 40).
  • Through-hole TO-126 package.

BD234G Applications

  • Used in 5-10W audio amplifier outputs.
  • Suitable for driver and predriver stages.
  • Ideal for complementary circuit designs.
  • General purpose switching up to 2A.

BD234G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for BD234G?

The collector-emitter voltage (VCEO) is 45V.

What is the package type of BD234G?

The BD234G is available in a TO-225AA / TO-126-3 through-hole package (supplier device package TO-126).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BD234G RoHS compliant?

Yes, the BD234G is RoHS3 compliant and lead-free (Pb-Free) as verified in the datasheet.

What is the DC current gain (hFE) of BD234G?

At IC=0.15A, VCE=2.0V, the minimum hFE is 40. At IC=1.0A, VCE=2.0V, the minimum hFE is 25.

What is the maximum collector current for BD234G?

The maximum collector current (IC) is 2A.

What is the power dissipation rating of BD234G?

The total device power dissipation is 25W at TC=25°C.

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