| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD234 from STMicroelectronics is a silicon epitaxial-base PNP power transistor housed in a Jedec SOT-32 plastic package. It is intended for use in medium power linear and switching applications.
Key electrical characteristics include a collector-emitter voltage (VCEO) of -45V and a continuous collector current (IC) of -2A. The device offers a maximum power dissipation (Ptot) of 25W at 25°C and a thermal resistance (Rthj-case) of 5°C/W. The transition frequency (fT) is 3MHz.
The transistor is suitable for various applications requiring medium power handling. Its SOT-32 package is a common form factor for power transistors, facilitating through-hole mounting.
Absolute maximum ratings include a collector-base voltage (VCBO) of -45V, emitter-base voltage (VEBO) of -5V, and a peak collector current (ICM) of -6A. Storage temperature ranges from -65°C to 150°C, with a maximum operating junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD234 transistor is -45V.
The continuous collector current (IC) rating for the BD234 is -2A.
The maximum power dissipation (Ptot) for the BD234 transistor is 25W at 25°C.
The BD234 transistor is available in a SOT-32 package.
The transition frequency (fT) of the BD234 transistor is 3MHz.