| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD233 is a silicon power transistor from STMicroelectronics, categorized as an NPN Bipolar Junction Transistor (BJT). It is designed for through-hole mounting in a TO-220 package.
Key electrical specifications include a maximum collector-emitter voltage of 25V and a maximum collector current of 2A. The transistor can dissipate up to 25W of power and has a frequency response up to 3MHz. Its typical DC current gain (hFE) is 25 at 1A.
This component is suitable for general-purpose amplification and switching applications where its power and voltage ratings are appropriate. The through-hole mounting makes it easy to integrate into breadboard or PCB designs for prototyping and production.
Environmental compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are noted as unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage for the BD233 transistor is 25V.
The BD233 transistor has a maximum collector current of 2A.
The BD233 transistor has a power dissipation rating of 25W.
The BD233 is an NPN Bipolar Junction Transistor (BJT).
The BD233 transistor is packaged in a TO-220 case and is designed for through-hole mounting.