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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD203 is an NPN silicon power transistor manufactured by NXP Semiconductors. It is designed for medium power switching and amplifier applications, including Hi-Fi equipment.
Key electrical specifications include a collector-emitter breakdown voltage (Vce(br)) of 60V minimum, a maximum collector-emitter voltage (Vce(max)) of 60V, and a maximum collector-base voltage (Vcb) of 60V. The typical collector current (Ic) is 8A, with a typical power dissipation (Pd) of 55W. It also features a typical current gain (hFE) of 30 and a transition frequency (ft) of 3MHz.
This transistor is suitable for applications requiring medium power handling. Its NPN polarity and silicon material make it a versatile component for various electronic circuits.
The BD203 is typically housed in a TO-220 package and is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vce(br)) for the BD203 is a minimum of 60V.
The typical collector current (Ic) for the BD203 is 8A.
The typical power dissipation (Pd) for the BD203 is 55W.
The typical current gain (hFE) for the BD203 is 30.
The BD203 is an NPN silicon power transistor.
The BD203 is used for medium power switching and amplifier applications, including Hi-Fi equipment.