| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD182 from SESCOCEM is an NPN silicon transistor designed for a wide range of high power applications, including power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators.
This transistor features a Collector-Emitter Voltage (VCEO) of 60V and a Collector Current (IC) of 15A. It can handle a total power dissipation of 117W, with a higher rating of 150W at temperatures below 25°C.
The BD182 is housed in a TO-3 package, suitable for applications requiring robust thermal management. Its junction temperature can reach up to 200°C, with a thermal resistance from junction to case of 1.5°C/W.
Key electrical characteristics include a static forward current transfer ratio (hFE) ranging from 20 to 70 at VCE=4.0V and IC=4.0A, and a collector-emitter saturation voltage (VCE(SAT)) of 1.0V at IC=4A and IB=0.4A. The collector-emitter breakdown voltage (VCEO(BR)) is 60V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the BD182 transistor is 60V.
The maximum continuous Collector Current (IC) for the BD182 is 15A.
The total power dissipation (PTOT) of the BD182 transistor is 117W.
The BD182 transistor comes in a TO-3 package.
The static forward current transfer ratio (hFE) of the BD182 is between 20 and 70 when tested at VCE=4.0V and IC=4.0A.
The collector-emitter saturation voltage (VCE(SAT)) for the BD182 is 1.0V when tested at IC=4A and IB=0.4A.