| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD182 is an NPN silicon transistor from RCA, suitable for a wide range of high power applications including power switching circuits, audio amplifiers, solenoid drivers, and series and shunt regulators.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of 60V and a Collector Current (IC) of 7A. It can handle a Power Dissipation (PT) of 150W at a case temperature below 25°C and has a maximum junction temperature of 200°C. The transistor is housed in a TO-3 case.
With a thermal resistance from junction to case of 1.5°C/W, the BD182 is designed for robust performance in demanding applications. Its static forward current transfer ratio (hFE) ranges from 20 to 70 under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the BD182 transistor is 60V.
The maximum Collector Current (IC) for the BD182 transistor is 7.0A.
The Power Dissipation (PT) of the BD182 transistor is 150W at a case temperature below 25°C.
The storage temperature range for the BD182 transistor is -65 to +200°C.
The BD182 transistor is supplied in a TO-3 package.
The static forward current transfer ratio (hFE) of the BD182 transistor is between 20 and 70 when tested at VCE=4.0V and IC=4.0A.