BD179G NPN bipolar junction transistor with 80V collector-emitter voltage, 3A continuous collector current, and 30W power dissipation. Housed in a TO-126 through-hole package.
Mfr Part #:

BD179G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor with 80V collector-emitter voltage, 3A continuous collector current, and 30W power dissipation. Housed in a TO-126 through-hole package.
Total Stock: 1,064 pcs

BD179G Available from 1 distributor

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1,064 pcs
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BD179G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Medical Grade
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD179G Description

Short technical summary and product information.

The BD179G is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical specifications include a collector-emitter voltage (Vceo) of 80V, continuous collector current (Ic) of 3A, and power dissipation (Pd) of 30W. The DC current gain (hFE) is a minimum of 63 at Ic=150mA and Vce=2V. The collector-emitter saturation voltage is a maximum of 800mV at Ib=100mA and Ic=1A. The transition frequency (fT) is 3 MHz.

 

The device is housed in a TO-225AA / TO-126-3 through-hole package, suitable for PCB mounting. It operates over a junction temperature range of -65°C to 150°C. The BD179G is RoHS3 compliant and has an MSL of 1 (unlimited).

BD179G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BD179G NPN Bipolar Transistor, 80V Vceo, 3A Ic, TO-126
Subcategory: Single NPN

BD179G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BD179G Features

  • NPN bipolar junction transistor design.
  • 80V collector-emitter voltage rating.
  • 3A continuous collector current capability.
  • 30W power dissipation capacity.
  • TO-126 through-hole package.

BD179G Applications

  • Suitable for general purpose switching circuits.
  • Used in linear amplification stages.
  • Ideal for medium power driver applications.

BD179G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the BD179G?

TO-225AA / TO-126-3 through-hole package.

What is the operating temperature range?

-65°C to 150°C (junction).

Is the BD179G RoHS compliant?

According to available data, it is RoHS3 compliant, but this is unverified.

What is the collector-emitter voltage rating?

80V.

What is the collector current rating?

3A continuous.

What is the DC current gain (hFE)?

Minimum 63 at Ic=150mA, Vce=2V.

What is the transition frequency?

3 MHz.

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