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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,064 pcs
|
1064 pcs | On Request | 1 | On Request | On Request | 708 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD179G is an NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a collector-emitter voltage (Vceo) of 80V, continuous collector current (Ic) of 3A, and power dissipation (Pd) of 30W. The DC current gain (hFE) is a minimum of 63 at Ic=150mA and Vce=2V. The collector-emitter saturation voltage is a maximum of 800mV at Ib=100mA and Ic=1A. The transition frequency (fT) is 3 MHz.
The device is housed in a TO-225AA / TO-126-3 through-hole package, suitable for PCB mounting. It operates over a junction temperature range of -65°C to 150°C. The BD179G is RoHS3 compliant and has an MSL of 1 (unlimited).
TO-225AA / TO-126-3 through-hole package.
-65°C to 150°C (junction).
According to available data, it is RoHS3 compliant, but this is unverified.
80V.
3A continuous.
Minimum 63 at Ic=150mA, Vce=2V.
3 MHz.