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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,920 pcs
|
1920 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD17910STU is an NPN bipolar junction transistor from On Semiconductor, intended for general-purpose switching and amplification. Its collector-emitter voltage is rated at 80 V, and it can handle a continuous collector current of 3 A. The device guarantees a minimum DC current gain of 63 at 150 mA collector current and 2 V collector-emitter voltage. Its collector-emitter saturation voltage is specified at a maximum of 800 mV when driven with 100 mA base current and 1 A collector current. The transition frequency is 3 MHz, and the maximum power dissipation is 30 W.
Mechanically, the transistor is housed in a TO-225AA / TO-126-3 through-hole package, with the supplier device package identified as TO-126-3. The junction temperature limit is 150°C. The part is listed as RoHS3 compliant, REACH unaffected, and rated with an MSL of 1 (unlimited floor life). These characteristics make it suitable for moderate-power through-hole designs in low-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.72 | $1.72 |
| 10+ | $1.06 | $1.06 |
| 100+ | $0.70 | $0.70 |
| 500+ | $0.55 | $0.55 |
| 1,000+ | $0.47 | $0.47 |
| 1,920+ | $0.42 | $0.42 |
| 5,760+ | $0.38 | $0.38 |
| 11,520+ | $0.36 | $0.36 |
| 26,880+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
TO-225AA / TO-126-3 through-hole package, with supplier device package TO-126-3.
150°C.
Yes, it is listed as RoHS3 compliant.
Minimum 63 at Ic=150 mA and Vce=2 V.
800 mV at Ib=100 mA and Ic=1 A.
3 MHz.