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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,860 pcs
|
1860 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD17610STU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 45V, a maximum collector current of 3A, and a maximum power dissipation of 30W. The DC current gain (hFE) is a minimum of 63 at a test condition of 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 800mV at a base current of 100mA and collector current of 1A. The transistor has a typical transition frequency of 3MHz.
The device is housed in a TO-225AA / TO-126-3 through-hole package, with a supplier device package designation of TO-126-3. It supports a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1,024+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vce) is 45V.
The maximum collector current (Ic) is 3A.
It is available in a TO-225AA / TO-126-3 through-hole package.
The maximum junction temperature is 150°C.
Yes, it is listed as RoHS3 compliant.