BD17610STU BD17610STU is a PNP bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 45V, a maximum collector current of 3A, and a power dissipation of 30W.
Mfr Part #:

BD17610STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BD17610STU is a PNP bipolar junction transistor from On Semiconductor. It features a collector-emitter breakdown voltage of 45V, a maximum collector current of 3A, and a power dissipation of 30W.
Total Stock: 1,860 pcs
$ Price Range: $0.29

BD17610STU Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,860 pcs
1860 pcs On Request 1 On Request On Request 19+ On Request On Request

BD17610STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD17610STU Description

Short technical summary and product information.

The BD17610STU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical specifications include a maximum collector-emitter breakdown voltage of 45V, a maximum collector current of 3A, and a maximum power dissipation of 30W. The DC current gain (hFE) is a minimum of 63 at a test condition of 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 800mV at a base current of 100mA and collector current of 1A. The transistor has a typical transition frequency of 3MHz.

 

The device is housed in a TO-225AA / TO-126-3 through-hole package, with a supplier device package designation of TO-126-3. It supports a maximum junction temperature of 150°C.

BD17610STU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BD17610STU PNP Bipolar Transistor
Subcategory: Single PNP

BD17610STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD17610STU Estimated Pricing

Qty Low High
1,024+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD17610STU Features

  • PNP bipolar junction transistor design.
  • 45V collector-emitter breakdown voltage.
  • 3A maximum collector current rating.
  • 30W maximum power dissipation capability.
  • Through-hole TO-126-3 package.

BD17610STU Applications

  • General purpose switching and amplification.
  • Medium power linear regulator circuits.
  • Driver stages in audio amplifiers.
  • Load switching for DC motors.

BD17610STU FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BD17610STU?

The maximum collector-emitter breakdown voltage (Vce) is 45V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 3A.

What package does the BD17610STU come in?

It is available in a TO-225AA / TO-126-3 through-hole package.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

Is the BD17610STU RoHS compliant?

Yes, it is listed as RoHS3 compliant.

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