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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,680 pcs
|
7680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD17510STU is an NPN bipolar junction transistor from ON Semiconductor, packaged in a TO-126-3 through-hole case. It supports 45V collector-emitter voltage and 3A collector current, and can dissipate up to 30W.
Key electrical specifications include a minimum DC current gain (hFE) of 63 at Ic=150mA and Vce=2V. The collector-emitter saturation voltage is 800mV maximum at Ib=100mA and Ic=1A. Transition frequency is typically 3MHz, and the maximum junction temperature is 150°C. These parameters define a medium-speed, medium-power transistor for general-purpose linear and switching designs.
The component is supplied in a TO-225AA / TO-126-3 through-hole package. This package provides a mounting tab for thermal contact and is suitable for insertion into standard through-hole PCBs. As with any power transistor, heat sinking and thermal design should be considered when operating near maximum dissipation ratings.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.28 | $1.28 |
| 10+ | $0.76 | $0.76 |
| 100+ | $0.51 | $0.51 |
| 500+ | $0.40 | $0.40 |
| 1,920+ | $0.33 | $0.33 |
| 5,760+ | $0.31 | $0.31 |
| 11,520+ | $0.31 | $0.31 |
| 26,880+ | $0.30 | $0.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD17510STU has a maximum collector-emitter voltage of 45 V.
The maximum collector current is 3 A.
The maximum power dissipation is 30 W.
It is available in a TO-225AA / TO-126-3 through-hole package; the supplier device package is TO-126-3.
The maximum junction temperature is 150°C.
The existing data lists it as RoHS3 compliant, but this status is unverified.
The minimum hFE is 63 at Ic=150mA and Vce=2V.