| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,815 pcs
|
5815 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 1530+ | On Request | On Request |
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The BD16910EFV-ME2 from ROHM Semiconductor is a half-bridge gate driver integrated circuit. It is designed for power management applications, particularly within automotive environments requiring high reliability. This device supports a supply voltage range of 3V to 5.5V and operates across a broad temperature spectrum from -40°C to 150°C junction temperature.
Featuring two independent drivers capable of controlling N-channel MOSFETs in a half-bridge configuration, the BD16910EFV-ME2 utilizes non-inverting logic inputs for straightforward integration. It is packaged in a 24-pin HTSSOP-B surface-mount case with an exposed pad for enhanced thermal management. The series designation indicates compliance with AEC-Q100 automotive qualification standards.
Ideal for automotive powertrain systems, motor control, and switching power supplies, this gate driver is suitable for applications such as battery management and HVAC systems. Its robust design ensures reliable operation in demanding conditions, making it a solid choice for engineers needing efficient half-bridge driving capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD16910EFV-ME2 operates with a supply voltage from 3V to 5.5V.
The operating temperature range for the BD16910EFV-ME2 is -40°C to 150°C.
The BD16910EFV-ME2 includes two independent drivers.
This gate driver is designed to control N-Channel MOSFETs.
The BD16910EFV-ME2 is supplied in a 24-HTSSOP-B package.
Yes, the BD16910EFV-ME2 is RoHS3 compliant.