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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
228,006 pcs
|
228006 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,980 pcs
|
1980 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Voltage |
The BD159STU is a NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring a collector-emitter breakdown voltage of 350V.
Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA collector current and 10V collector-emitter voltage. The device can handle a collector current of 500mA and dissipates up to 20W of power.
The BD159STU is housed in a through-hole TO-126-3 package (also known as TO-225AA), making it suitable for PCB mounting. It is supplied in a RoHS3 compliant version and has an MSL rating of 1 (unlimited). This part is a reliable choice for medium-voltage switching applications.
| Qty | Low | High |
|---|---|---|
| 1,920+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 350V.
The maximum collector current (IC) is 500mA.
The BD159STU is available in a through-hole TO-126-3 package (also known as TO-225AA).
The minimum DC current gain (hFE) is 30 at a test condition of Ic=50mA and Vce=10V.
The BD159STU is listed as RoHS3 compliant, though this has not been independently verified.