BD159 The BD159 is a 350V, 0.5A NPN power transistor from On Semiconductor, housed in a through-hole TO-126 package and RoHS compliant.
Mfr Part #:

BD159

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD159 is a 350V, 0.5A NPN power transistor from On Semiconductor, housed in a through-hole TO-126 package and RoHS compliant.
Total Stock: 157 pcs
$ Price Range: $0.24

BD159 Available from 1 distributor

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157 pcs
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BD159 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current - Peak
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCB)
Collector-Emitter Sustaining Voltage (BVCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate above 25°C
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEB)
Mounting Type
Operating Temperature
Packaging Type
Power
Standard Package Quantity
Storage Temperature
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Voltage

BD159 Description

Short technical summary and product information.

The BD159 is a plastic medium-power silicon NPN transistor designed by On Semiconductor for power output stages in consumer electronics such as televisions, radios, and phonographs. It features a maximum collector-emitter voltage (VCEO) of 350V and a continuous collector current capability of 500mA (peak 1.0A). The transistor offers a minimum DC current gain (hFE) of 30 at 50mA and 10V, with a maximum of 240. Power dissipation is rated at 20W at a case temperature of 25°C, derated at 0.16W/°C above that. The device is supplied in a through-hole TO-225AA / TO-126-3 package (case 77-09) and is Pb-Free and RoHS compliant. It is suitable for transformerless line-operated equipment due to its high voltage rating.

BD159 Quick Information

Product Type: Bipolar (BJT) Power Transistor
Canonical Name: On Semiconductor BD159 NPN Power Transistor
Subcategory: Single Bipolar Junction Transistor

BD159 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BD159 Estimated Pricing

Qty Low High
2,500+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD159 Features

  • NPN silicon medium-power transistor.
  • Maximum VCEO rating of 350V.
  • Continuous collector current 500mA.
  • Power dissipation 20W at 25°C case.
  • Through-hole TO-126 package.

BD159 Applications

  • Power output stages in TVs, radios, and phonographs.
  • Transformerless line-operated equipment.
  • Medium-power switching and amplification circuits.

BD159 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BD159?

The maximum collector-emitter voltage (VCEO) is 350V.

What package does the BD159 come in?

The BD159 is available in a through-hole TO-225AA / TO-126-3 package (case 77-09).

What is the operating temperature range of the BD159?

The operating junction temperature range is -65°C to +150°C.

Is the BD159 RoHS compliant?

Yes, the BD159 is RoHS compliant and Pb-Free per the datasheet.

What is the maximum continuous collector current for the BD159?

The maximum continuous collector current is 500mA (0.5A).

What is the power dissipation rating of the BD159?

Power dissipation is 20W at a case temperature of 25°C, derated at 0.16W/°C above 25°C.

What is the DC current gain (hFE) range of the BD159?

The DC current gain (hFE) ranges from 30 to 240 at Ic=50mA, Vce=10V.

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