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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,200 pcs
|
5200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD140G from On Semiconductor is a PNP bipolar junction transistor designed for medium-power switching and amplification applications. It features a collector-emitter breakdown voltage (VCEO) of 80V and a continuous collector current (IC) rating of 1.5A, making it suitable for driver stages and output circuits. The device dissipates a maximum power of 1.25W, with a minimum DC current gain (hFE) of 40 at 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is typically 500mV at 500mA collector current with 50mA base current.
This transistor is packaged in a through-hole TO-225AA / TO-126-3 case, with the supplier device package designated as TO-126. It is designed for a wide operating junction temperature range from -55°C to 150°C, supporting robust performance in demanding environments. The BD140G is part of the BD140 family and is commonly used in general-purpose switching and linear amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.56 | $1.56 |
| 10+ | $0.99 | $0.99 |
| 100+ | $0.66 | $0.66 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The VCEO is 80V.
The collector current (IC) rating is 1.5A.
The maximum power dissipation (PD) is 1.25W.
It comes in a through-hole TO-225AA / TO-126-3 package, also known as TO-126.
The junction temperature range is -55°C to 150°C.
The minimum hFE is 40, tested at Ic=150mA and Vce=2V.
The maximum Vce(sat) is 500mV at Ib=50mA and Ic=500mA.