BD14016STU The BD14016STU is a PNP bipolar junction transistor from On Semiconductor, rated for 80V collector-emitter breakdown voltage and 1.5A collector current. It comes in a through-hole TO-126-3 package with 1.25W power dissipation.
Mfr Part #:

BD14016STU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BD14016STU is a PNP bipolar junction transistor from On Semiconductor, rated for 80V collector-emitter breakdown voltage and 1.5A collector current. It comes in a through-hole TO-126-3 package with 1.25W power dissipation.
Total Stock: 36,480 pcs
$ Price Range: $0.21

BD14016STU Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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36,480 pcs
36480 pcs On Request 1 On Request On Request On Request On Request On Request

BD14016STU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BD14016STU Description

Short technical summary and product information.

The BD14016STU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in through-hole assemblies.

 

Key electrical specifications include a collector-emitter breakdown voltage of 80V, a collector current rating of 1.5A, and a power dissipation of 1.25W. The DC current gain (hFE) is a minimum of 100 at a test condition of 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 500mV at a base current of 50mA and collector current of 500mA.

 

The device is housed in a TO-126-3 package (also known as TO-225AA) and is intended for through-hole mounting. The maximum junction operating temperature is 150°C.

BD14016STU Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BD140
Canonical Name: PNP Bipolar Junction Transistor, 80V, 1.5A, TO-126-3
Subcategory: Single PNP

BD14016STU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BD14016STU Estimated Pricing

Qty Low High
3,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BD14016STU Features

  • PNP bipolar junction transistor.
  • 80V collector-emitter breakdown voltage.
  • 1.5A collector current rating.
  • 1.25W power dissipation capability.
  • Through-hole TO-126-3 package.

BD14016STU Applications

  • Suitable for medium-power switching circuits.
  • Used in linear amplifier stages.
  • Ideal for driver and output stages.
  • Common in power management applications.

BD14016STU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BD14016STU?

The collector-emitter breakdown voltage is 80V.

What is the maximum collector current rating?

The maximum collector current is 1.5A.

What is the power dissipation rating?

The power dissipation is 1.25W.

What is the package type and mounting style?

The BD14016STU is available in a TO-126-3 (TO-225AA) package and is designed for through-hole mounting.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the minimum DC current gain (hFE)?

The minimum DC current gain is 100, measured at Ic=150mA and Vce=2V.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 500mV, measured at Ib=50mA and Ic=500mA.

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