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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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36,480 pcs
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36480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The BD14016STU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in through-hole assemblies.
Key electrical specifications include a collector-emitter breakdown voltage of 80V, a collector current rating of 1.5A, and a power dissipation of 1.25W. The DC current gain (hFE) is a minimum of 100 at a test condition of 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 500mV at a base current of 50mA and collector current of 500mA.
The device is housed in a TO-126-3 package (also known as TO-225AA) and is intended for through-hole mounting. The maximum junction operating temperature is 150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 80V.
The maximum collector current is 1.5A.
The power dissipation is 1.25W.
The BD14016STU is available in a TO-126-3 (TO-225AA) package and is designed for through-hole mounting.
The maximum operating junction temperature is 150°C.
The minimum DC current gain is 100, measured at Ic=150mA and Vce=2V.
The maximum collector-emitter saturation voltage is 500mV, measured at Ib=50mA and Ic=500mA.