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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,445 pcs
|
5445 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD14016S is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.
Key electrical specifications include a maximum collector-emitter breakdown voltage of 80V, a maximum collector current of 1.5A, and a maximum power dissipation of 1.25W. The DC current gain (hFE) is a minimum of 40 at a test condition of 150mA collector current and 2V collector-emitter voltage. The collector-emitter saturation voltage is a maximum of 500mV at a base current of 50mA and collector current of 500mA.
The transistor is housed in a through-hole TO-126-3 package (also known as TO-225AA). It has an operating junction temperature range up to 150°C. The device is suitable for medium-power circuits such as audio output stages, power management, and driver circuits.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V.
TO-126-3 (also TO-225AA).
150°C.
RoHS3 compliant (unverified).
1.5A.
1.25W.
40 at 150mA, 2V.