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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,920 pcs
|
1920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BD14010STU is a PNP bipolar junction transistor manufactured by On Semiconductor. It is rated for a collector-emitter voltage of 80V and a collector current of 1.5A, with a maximum power dissipation of 1.25W. The device provides a minimum DC current gain (hFE) of 63 when tested at 150mA collector current with 2V collector-emitter voltage, and features a maximum collector-emitter saturation voltage of 500mV at 50mA base current and 500mA collector current.
The transistor is housed in a TO-225AA / TO-126-3 through-hole package, making it suitable for PCB mounting in a variety of discrete circuit applications. The junction operating temperature is rated up to 150°C.
As a general-purpose PNP transistor, the BD14010STU is suitable for switching and amplification functions in low-to-medium power circuits. Its 80V voltage rating and 1.5A current capability position it for use in power management, driver stages, and other general-purpose discrete designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.61 | $0.61 |
| 10+ | $0.54 | $0.54 |
| 100+ | $0.42 | $0.42 |
| 500+ | $0.33 | $0.33 |
| 1,000+ | $0.26 | $0.26 |
| 2,000+ | $0.24 | $0.24 |
| 5,000+ | $0.22 | $0.22 |
| 10,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BD14010STU has a collector-emitter voltage (VCEO) rating of 80V.
The maximum collector current (IC) is 1.5A.
The BD14010STU has a maximum power dissipation of 1.25W.
The BD14010STU is available in a TO-225AA / TO-126-3 through-hole package.
The maximum junction temperature (TJ) is 150°C.
The minimum DC current gain (hFE) is 63, tested at 150mA collector current and 2V collector-emitter voltage.
The maximum collector-emitter saturation voltage (VCE(sat)) is 500mV, tested at 50mA base current and 500mA collector current.